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| AFP | Atomic Force Probing |
|---|---|
| ASIC | Application Specific Integrated Circuit |
| CAFM | Conductive Atomic Force Microscopy |
| CMOS | Complementary Metal Oxide Semiconductor |
| CTE | Coefficient of Thermal Expansion |
| DIP | Dual in-line plastic package |
| DUT | Device Under Test |
| EBAC | Electron Beam Absorbed Current |
| EBIC | Electron Beam Induced Current |
| EBSC | Electron Backscatter Diffraction |
| EFI | Electrical Fault Isolation |
| EOS | Electrical Overstress |
| ESD | Electrostatic Discharge |
| FIB | Focused Ion Beam |
| GB | Grain Boundaries |
| IC | Integrated Circuit |
| LSI | Large Scale Integration |
| LVP | Low Visibility Procedure |
| OBIRCH | Optical Beam Induced Resistance Change |
| PCB | Printed Circuit Board |
| PVC | Passive Voltage Contrast |
| RCI | Resistive Contrast Imaging |
| ROI | Region of Interest |
| RST | Remaining Siclicium Thickness |
| SEM | Scanning Electron Microscopy |
| SIL | Safety Integrity Level |
| SMU | Source Measure Unit |
| SRAM | Static Random Access Memory |
| TEM | Transmission Electronic Microscopy |
| TMA | Thermomechanical Analysis |
| VDD | Voltage Drain Drain (positive) |
| VLSI | Very Large Scale Integration |
| VSS | Voltage Source Source (negative, ground) |
| XRM | X-Ray Microscope |